X. J. Zhou

Bias-temperature instabilities and radiation effects in MOS devices

X. J. Zhou, Daniel M. Fleetwood, J. Félix et al. · IEEE Transactions on Nuclear Science · 2005 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

Charge separation techniques for irradiated pseudo-MOS SOI transistors

B. Jun, Daniel M. Fleetwood, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 2003 · 82 citations

Engineering, Electrical Engineering, Electronic Materials +16

Si/SiO<sub>2</sub> and SiC/SiO<sub>2</sub> Interfaces for MOSFETs – Challenges and Advances

Sokrates T. Pantelides, Sanwu Wang, Alberto Franceschetti et al. · Materials science forum · 2006 · 71 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics

X. J. Zhou, Leonidas Tsetseris, Sergey N. Rashkeev et al. · Applied Physics Letters · 2004 · 50 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability and radiation effects in IC technologies

Ronald D. Schrimpf, Kevin M. Warren, Robert A. Weller et al. · 2008 · 45 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17