B. Jun

Charge separation techniques for irradiated pseudo-MOS SOI transistors

B. Jun, Daniel M. Fleetwood, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 2003 · 81 citations

Device Modeling, Electrical Engineering, Engineering +10

Characterization of multiple Si∕SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation

B. Jun, Yelena White, Ronald D. Schrimpf et al. · Applied Physics Letters · 2004 · 33 citations

Optical Materials, Engineering, Silicon On Insulator +18

Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

D. K. Chen, Farah El Mamouni, X. J. Zhou et al. · IEEE Transactions on Nuclear Science · 2007 · 19 citations

Total dose radiation effects in partially-depleted SOI transistors with ultrathin gate oxide

B. Jun, M. Fouillat, Ronald D. Schrimpf et al. · 2005 · 15 citations

Electrical Engineering, Engineering, Buried Oxide +11

Charge trapping and low frequency noise in SOI buried oxides

Hao Xiong, B. Jun, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 2004 · 13 citations

Electrical Engineering, Engineering, Physics +12