Tenko Yamashita

Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet

Chun Wing Yeung, Jingyun Zhang, Robin Chao et al. · 2018 · 94 citations

Engineering, Electrical Engineering, Physics +17

High-k metal gate fundamental learning and multi-V<inf>t</inf> options for stacked nanosheet gate-all-around transistor

Jingyun Zhang, Takashi Ando, Chun Wing Yeung et al. · 2017 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology

Hiroaki Niimi, Zuoguang Liu, Oleg Gluschenkov et al. · IEEE Electron Device Letters · 2016 · 58 citations

Engineering, Electrical Engineering, Materials Science +15

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor

Miaomiao Wang, Jingyun Zhang, Huimei Zhou et al. · 2019 · 31 citations

Engineering, Electrical Engineering, Microelectronics +16

Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond

Chung-Hsun Lin, Wilfried Haensch, Phil Oldiges et al. · Symposium on VLSI Technology · 2011 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +17