Shaobo Dun

Demonstration of β-Ga₂O₃ Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm² or a 5A/700 V Handling Capabilities

Yuanjie Lv, Yuangang Wang, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2020 · 156 citations

Wide-bandgap Semiconductor, Engineering, Wide-bandgap P-type Niox +16

2.41 kV Vertical P-Nio/n-Ga ₂ O ₃ Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm ²

Hehe Gong, Yuanjie Lv, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2021 · 140 citations

Superior Performance β-Ga₂O₃ Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

Feihong Wu, Yuangang Wang, Guangzhong Jian et al. · IEEE Transactions on Electron Devices · 2023 · 53 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation

Hongyu Liu, Yuangang Wang, Yuanjie Lv et al. · IEEE Electron Device Letters · 2023 · 44 citations

Device Modeling, Semiconductors, Electrical Engineering +12

Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs

Xingye Zhou, Zhihong Feng, Li Wang et al. · Solid-State Electronics · 2014 · 27 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6