Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs - Concepedia

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Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs

27

Citations

12

References

2014

Year

Xingye Zhou, Zhihong Feng, Li Wang, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Shujun Cai

Solid-State Electronics

Wide-bandgap SemiconductorElectrical EngineeringEngineeringGate-lag Transient CharacteristicsApplied PhysicsAluminum Gallium NitrideBulk TrapsGan Power DeviceAlgan/gan Hemts

References

	Year	Citations

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