T. Hoffmann

Ultra-Low Power Flexible Precision FeFET Based Analog In-Memory Computing

Taha Soliman, Franz Müller, Tobias Kirchner et al. · 2020 · 115 citations

Engineering, Computer Engineering, Electrical Engineering +16

GaSb molecular beam epitaxial growth on <i>p</i>-InP(001) and passivation with <i>in situ</i> deposited Al2O3 gate oxide

Clément Merckling, Xiao Sun, A. Alian et al. · Journal of Applied Physics · 2011 · 41 citations · Full text

Engineering, Materials Engineering, Materials Science +17

3D stacked IC demonstration using a through silicon via first approach

J. Van Olmen, A. Mercha, Guruprasad Katti et al. · VUBIR (Vrije Universiteit Brussel) · 2011 · 25 citations

Engineering, Computer Engineering, Electrical Engineering +17

Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation

Chao‐An Lin, H. C. Chiu, T. H. Chiang et al. · Applied Physics Letters · 2011 · 24 citations

Engineering, Materials Science, Physics +17

On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs

J. Franco, B. Kaczer, M. Toledano-Luque et al. · Microelectronic Engineering · 2011 · 24 citations

Engineering, Electrical Engineering, Materials Science +14