F.T. Liou

A novel and direct determination of the interface traps in sub-100 nm CMOS devices with direct tunneling regime (12∼16 A) gate oxide

Steve S. Chung, S.-J. Chen, Chi kun Yang et al. · 2003 · 17 citations

Engineering, Electrical Engineering, Materials Science +17

Planarized aluminum metallization for sub-0.5 mu m CMOS technology

F.S. Chen, Yi Lin, Girish Dixit et al. · 2002 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

Hole current in dual dielectric under positive gate voltage

L.D. Yau, F.T. Liou, S. Chen · IEEE Electron Device Letters · 1983 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

Reactively sputtered titanium nitride films for submicron contact barrier metallization

Girish Dixit, C.C. Wei, F.T. Liou et al. · Applied Physics Letters · 1993 · 13 citations

Natural Sciences, Materials Engineering, Materials Science +17

Polycrystalline In2O3 and In2O3/Y2O3 photoanodes

F.T. Liou, Christopher Yang, K.M. Hakim et al. · Journal of Applied Electrochemistry · 1983 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +13