Reactively sputtered titanium nitride films for submicron contact barrier metallization

Abstract

Titanium nitride (TiN) is widely used as a barrier metal for submicron metallization because of its superior thermal stability. Various methods of forming TiN films have been explored. Oxygen passivation of the grain boundaries of the TiN and stoichiometry of the TiN are reported to be the dominant factors in achieving good barrier properties. We report on the structure property correlation of the TiN barrier metal films.