W. K. Chu

Optimization of the germanium preamorphization conditions for shallow-junction formation

Mehmet C. Öztürk, J. J. Wortman, C. M. Osburn et al. · IEEE Transactions on Electron Devices · 1988 · 116 citations

Materials Science, Ion Implantation, Engineering +10

Negative transconductance and negative differential resistance in a grid-gate modulation-doped field-effect transistor

K. Ismail, W. K. Chu, Anthony Yen et al. · Applied Physics Letters · 1989 · 102 citations

Device Modeling, Semiconductors, Electrical Engineering +15

Surface-superlattice effects in a grating-gate GaAs/GaAlAs modulation doped field-effect transistor

K. Ismail, W. K. Chu, D.A. Antoniadis et al. · Applied Physics Letters · 1988 · 79 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Channeling effect for low energy ion implantation in Si

K. Cho, W. R. Allen, T. G. Finstad et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 65 citations

Ion Implantation, Electrical Engineering, Engineering +3

Structural study of GaSb/AlSb strained-layer superlattice

C. K. Pan, D. C. Zheng, T. G. Finstad et al. · Physical review. B, Condensed matter · 1985 · 52 citations

X-ray Crystallography, Crystal Structure, Superconducting Material +17