Surface-superlattice effects in a grating-gate GaAs/GaAlAs modulation doped field-effect transistor

Abstract

We report transport phenomena exhibited by a two-dimensional electron gas at the interface of a modulation doped GaAs/GaAlAs heterostructure in the presence of a field-effect-controlled periodic potential modulation. By means of x-ray lithography and lift-off, a 0.2-μm-period Schottky barrier grating gate was fabricated in lieu of the common continuous gate in a field-effect transistor configuration. Conductance measurements at 4.2 K provide evidence of a superlattice effect.