Tatsuo Oomori

Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiC

Tomohiro Hatayama, Shiro Hino, Naruhisa Miura et al. · IEEE Transactions on Electron Devices · 2008 · 68 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +8

21.5-dBm Power-Handling 5-GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration With Depletion-Layer-Extended Transistors (DETs)

T. Ohnakado, Satoshi Yamakawa, T. Murakami et al. · IEEE Journal of Solid-State Circuits · 2004 · 64 citations

Electrical Engineering, Depletion-layer-extended Transistors, Depletion-layer-extended Transistor +9

Measurements of the Cl atom concentration in radio-frequency and microwave plasmas by two-photon laser-induced fluorescence: Relation to the etching of Si

Kouichi Ono, Tatsuo Oomori, Mutumi Tuda et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1992 · 49 citations

Photonics, Cl Atom Concentration, Two-photon Laser-induced Fluorescence +14

Simulation of Ion Trajectories near Submicron-Patterned Surface Including Effects of Local Charging and Ion Drift Velocity toward Wafer

Hiroki Ootera, Tatsuo Oomori, Mutumi Tuda et al. · Japanese Journal of Applied Physics · 1994 · 46 citations

Electrical Engineering, Ion Implantation, Engineering +15

Chemical Kinetics of Chlorine in Electron Cyclotron Resonance Plasma Etching of Si

Kouichi Ono, Mutumi Tuda, Kazuyasu Nishikawa et al. · Japanese Journal of Applied Physics · 1994 · 38 citations

Chemical Engineering, Optical Materials, Engineering +15