Tatsuo Oomori - Concepedia

Author

Tatsuo Oomori

Mitsubishi Electric (Japan)

Also Known As

Oomori, Tatsuo, T. Oomori, Tatsuo Oomori, Tatsuo Oomori Tatsuo Oomori, Tomokazu Oomori

Publications

959

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)Mitsubishi Electric (Germany)Mitsubishi Electric (United States)Mitsubishi Group (Japan)Tokyo Institute of Technology

About

Tatsuo Oomori is an author at Mitsubishi Electric (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	33	809
2	Applied Physics	17	27	654
3	Chemical Engineering	7	7	171
4	Chemistry	5	5	152
5	Natural Sciences	4	4	126

Tatsuo Oomori

Publications

819

Citations

H-Index

Page 1

	Year	Citations
Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiC Tomohiro Hatayama, Shiro Hino, Naruhisa Miura, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringApplied Physics	2008	68
21.5-dBm Power-Handling 5-GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration With Depletion-Layer-Extended Transistors (DETs) T. Ohnakado, Satoshi Yamakawa, T. Murakami, IEEE Journal of Solid-State Circuits Electrical EngineeringDepletion-layer-extended TransistorsDepletion-layer-extended TransistorEngineeringRf Semiconductor	2004	64
Measurements of the Cl atom concentration in radio-frequency and microwave plasmas by two-photon laser-induced fluorescence: Relation to the etching of Si Kouichi Ono, Tatsuo Oomori, Mutumi Tuda, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films PhotonicsCl Atom ConcentrationTwo-photon Laser-induced FluorescenceEngineeringCl2 Plasmas	1992	49
Simulation of Ion Trajectories near Submicron-Patterned Surface Including Effects of Local Charging and Ion Drift Velocity toward Wafer Hiroki Ootera, Tatsuo Oomori, Mutumi Tuda, Japanese Journal of Applied Physics Electrical EngineeringIon ImplantationEngineeringElectron-beam LithographyPhysics	1994	46
Chemical Kinetics of Chlorine in Electron Cyclotron Resonance Plasma Etching of Si Kouichi Ono, Mutumi Tuda, Kazuyasu Nishikawa, Japanese Journal of Applied Physics Chemical EngineeringOptical MaterialsEngineeringPlasma ElectronicsAnalytical Instrumentation	1994	38
Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2 Natsuko Miura, Keiko Fujihira, Yukiyasu Nakao, EngineeringVery Low On-resistancePower ElectronicsSemiconductor Device4H-sic Mosfets	2006	37
High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator Shiro Hino, T. Hatayama, Jun Kato, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2008	34
Platinum Etching and Plasma Characteristics in RF Magnetron and Electron Cyclotron Resonance Plasmas Kazuyasu Nishikawa, Yoshihiro Kusumi, Tatsuo Oomori, Japanese Journal of Applied Physics EngineeringPlatinum EtchingPlasma PhysicsPlasma ProcessingPlasma Electronics	1993	34
Platinum etching in Ar/O2 mixed gas plasma with a thin SiO2 etching mask Teruo Shibano, K. Nakamura, Tatsuo Oomori Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringPlasma CombustionThin Sio2ChemistryPlasma Processing	1998	30
Sidewall deposition film in platinum etching with Ar/halogen mixed gas plasmas Teruo Shibano, Tatsuo Oomori Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceMaterials EngineeringChemical EngineeringEngineeringDeposition Films	1997	27

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