S. Joblot - Concepedia

Author

S. Joblot

STMicroelectronics (France)

Also Known As

Joblot, S., S Joblot, S. Joblot, Sylvain JOBLOT

Publications

485

Citations

H-Index

Concepts

All Affiliations

STMicroelectronics (France)Laboratoire d'Électronique des Technologies de l'Information Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA Grenoble Institut polytechnique de Grenoble

About

S. Joblot is an author at STMicroelectronics (France) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	329
2	Electrical Engineering	9	9	302
3	Applied Physics	6	6	262
4	Materials Engineering	2	2	29
5	Computer Engineering	1	1	11

S. Joblot

Publications

370

Citations

H-Index

Page 1

	Year	Citations
A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives P. Chevalier, G. Avenier, G. Ribes, Low-power ElectronicsElectrical EngineeringMillimeter Wave TechnologyEngineeringVlsi Design	2014	171
High-electron-mobility AlGaN∕GaN heterostructures grown on Si(001) by molecular-beam epitaxy S. Joblot, F. Sèmond, Y. Cordier, Applied Physics Letters Materials ScienceElectrical EngineeringEpitaxial GrowthMolecular-beam EpitaxyEngineering	2005	28
Silicon interposer with integrated antenna array for millimeter-wave short-range communications Laurent Dussopt, Yann Lamy, S. Joblot, Silicon InterposerEngineeringMillimeter Wave TechnologyMicrowave TransmissionAntenna	2012	27
Copper pillar interconnect capability for mmwave applications in 3D integration technology S. Joblot, P. Bar, H. Sibuet, Microelectronic Engineering Copper Pillar3D Ic ArchitectureElectrical EngineeringMillimeter Wave TechnologyEngineering	2013	22
Innovative wafer-level encapsulation &amp; underfill material for silicon interposer application C. Ferrandon, A. Jouve, S. Joblot,	2013	19
Through Silicon Capacitor co-integrated with TSVs on silicon interposer Olivier Guiller, S. Joblot, Yann Lamy, Microelectronic Engineering 3D Ic ArchitectureElectrical EngineeringEngineeringSilicon CapacitorAdvanced Packaging (Semiconductors)	2013	18
AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy S. Joblot, Y. Cordier, F. Sèmond, Superlattices and Microstructures Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	2006	15
Growth of wurtzite‐GaN on silicon (100) substrate by molecular beam epitaxy S. Joblot, F. Sèmond, F. Natali, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Wide-bandgap SemiconductorAluminium NitrideEngineeringWurtzite-gan LayersSemiconductors	2005	14
AlGaN/GaN HEMTs on (001) silicon substrates S. Joblot, Y. Cordier, F. Sèmond, Electronics Letters	2006	12
mmW characterization of wafer level passivation for 3D silicon interposer Yann Lamy, O. El Bouayadi, C. Ferrandon, EngineeringSmart InterposerMicrowave TransmissionInterconnect (Integrated Circuits)Mmw Characterization	2013	12

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