S. Joblot

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 171 citations

Low-power Electronics, Electrical Engineering, Millimeter Wave Technology +15

High-electron-mobility AlGaN∕GaN heterostructures grown on Si(001) by molecular-beam epitaxy

S. Joblot, F. Sèmond, Y. Cordier et al. · Applied Physics Letters · 2005 · 28 citations

Materials Science, Electrical Engineering, Epitaxial Growth +12

Silicon interposer with integrated antenna array for millimeter-wave short-range communications

Laurent Dussopt, Yann Lamy, S. Joblot et al. · 2012 · 27 citations

Silicon Interposer, Engineering, Millimeter Wave Technology +9

Copper pillar interconnect capability for mmwave applications in 3D integration technology

S. Joblot, P. Bar, H. Sibuet et al. · Microelectronic Engineering · 2013 · 22 citations

Copper Pillar, 3D Ic Architecture, Electrical Engineering +13

Innovative wafer-level encapsulation & underfill material for silicon interposer application

C. Ferrandon, A. Jouve, S. Joblot et al. · 2013 · 19 citations