Soon Aik Chew

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Hans Mertens, R. Ritzenthaler, Andriy Hikavyy et al. · 2016 · 198 citations

Engineering, Electrical Engineering, Materials Science +17

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Hans Mertens, R. Ritzenthaler, Adrian Chasin et al. · 2016 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

Vertically stacked gate-all-around Si nanowire transistors: Key Process Optimizations and Ring Oscillator Demonstration

Hans Mertens, R. Ritzenthaler, V. Peña et al. · 2017 · 130 citations

Engineering, Electrical Engineering, Microelectronics +16

Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2

Hao Yu, Marc Schaekers, A. Peter et al. · IEEE Transactions on Electron Devices · 2016 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect

Liesbeth Witters, Jérôme Mitard, Roger Loo et al. · 2015 · 43 citations

Engineering, Electrical Engineering, Materials Science +14