Soon Aik Chew

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Hans Mertens, R. Ritzenthaler, Andriy Hikavyy et al. · 2016 · 192 citations

Engineering, Si Nws, Bulk Si Substrates +16

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Hans Mertens, R. Ritzenthaler, Adrian Chasin et al. · 2016 · 149 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Vertically stacked gate-all-around Si nanowire transistors: Key Process Optimizations and Ring Oscillator Demonstration

Hans Mertens, R. Ritzenthaler, V. Peña et al. · 2017 · 124 citations

Electrical Engineering, Si Nanowire, Vlsi Design +14

Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2

Hao Yu, Marc Schaekers, A. Peter et al. · IEEE Transactions on Electron Devices · 2016 · 52 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect

Liesbeth Witters, Jérôme Mitard, Roger Loo et al. · 2015 · 43 citations

Engineering, Integrated Circuits, Strained Germanium Quantum +16