Raymond L. Ladbury

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory

Dakai Chen, Edward P. Wilcox, Raymond L. Ladbury et al. · IEEE Transactions on Nuclear Science · 2017 · 43 citations · Full text

Planar Nand, Electrical Engineering, Engineering +15

Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16–300 K

Cheryl J. Marshall, Paul W. Marshall, Raymond L. Ladbury et al. · IEEE Transactions on Nuclear Science · 2010 · 27 citations

Sel Cross Section, Electrical Engineering, Ion Implantation +14

Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for Sub-130 nm Technologies

Jonathan A. Pellish, M.A. Xapsos, C. Stauffer et al. · IEEE Transactions on Nuclear Science · 2010 · 27 citations · Full text

Energy Deposition, Engineering, Space Environment +17

Compendium of Single Event Effects for Candidate Spacecraft Electronics for NASA

Martha V. O'Bryan, Kenneth A. LaBel, Jonathan A. Pellish et al. · 2012 · 26 citations · Full text

Engineering, Radiation Effect, Radiation Exposure +20

Schottky Diode Derating for Survivability in a Heavy Ion Environment

Megan C. Casey, Jean‐Marie Lauenstein, Raymond L. Ladbury et al. · IEEE Transactions on Nuclear Science · 2015 · 26 citations

Electrical Engineering, Forward Currents, Engineering +15