Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16–300 K

Abstract

Heavy ion-induced single event latchup (SEL) is characterized in a commercially available CMOS readout integrated circuit operating at cryogenic temperatures. SEL observed at 24 K and below is believed to be possible when free carriers produced by an ion strike initiate an exponential increase in the free carrier density via shallow-level impact ionization (SLII). This results in a large current increase that proceeds to a sustained latched state, even though the classic condition for parasitic bipolar gain product is not met since it is much less than unity. The LET threshold for SEL is significantly lower at 20 K as compared to 300 K although the saturated cross section is 2-3 times higher at 300 K. The temperature dependence of the SEL cross section is characterized from 16-300 K. SEL behavior attributed to the classical cross-coupled parasitic bipolar model is observed from ~135-300 K, and the reduction in the SEL cross section is remarkably modest as the temperature is lowered from room temperature to ~200 K. Temperature dependent electrical latchup characterization of a 130 nm pnpn test structure also indicates a change in the latchup behavior at ~50 K consistent with the SLII mechanism.