L. Lanzerotti

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak et al. · 2002 · 129 citations

Engineering, Vlsi Design, Ge Ramp +18

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 128 citations

Foundation of rf CMOS and SiGe BiCMOS technologies

J. Dunn, D. Ahlgren, Douglas Coolbaugh et al. · IBM Journal of Research and Development · 2003 · 101 citations

Electrical Engineering, Ibm Sige Bicmos, Engineering +13

Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

Alvin Joseph, D.L. Harame, B. Jagannathan et al. · Proceedings of the IEEE · 2005 · 89 citations

Engineering, Communication Interface, Sige Bicmos Wl +19

Si/Si/sub 1-x-y/Ge_xC_y/Si heterojunction bipolar transistors

L. Lanzerotti, A. St. Amour, C.W. Liu et al. · IEEE Electron Device Letters · 1996 · 79 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11