Byungha Shin

A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

Yuan Yu, Lingquan Wang, Bo Yu et al. · IEEE Electron Device Letters · 2011 · 179 citations

Engineering, Electrical Engineering, Materials Science +17

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Byungha Shin, J. R. Weber, Rathnait Long et al. · Applied Physics Letters · 2010 · 163 citations · Full text

Engineering, Materials Engineering, Materials Science +17

$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Uttam Singisetti, Mark A. Wistey, Greg J. Burek et al. · IEEE Electron Device Letters · 2009 · 85 citations

Engineering, Electrical Engineering, Materials Science +12

Three-Dimensional a-Si:H Solar Cells on Glass Nanocone Arrays Patterned by Self-Assembled Sn Nanospheres

Jeehwan Kim, Augustin J. Hong, Jae-Woong Nah et al. · ACS Nano · 2011 · 66 citations

Engineering, Materials Engineering, Materials Science +17

Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

M. Tabbal, Tae‐Gon Kim, David Woolf et al. · Applied Physics A · 2009 · 61 citations · Full text

Engineering, Materials Engineering, Materials Science +14