Rathnait Long

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Byungha Shin, J. R. Weber, Rathnait Long et al. · Applied Physics Letters · 2010 · 163 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

Rathnait Long, Paul C. McIntyre · Materials · 2012 · 92 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Interface Trap Density Reduction for Al₂O₃/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition

D. M. Zhernokletov, Muhammad Adi Negara, Rathnait Long et al. · ACS Applied Materials & Interfaces · 2015 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +17

Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN

Rathnait Long, Aryan Hazeghi, Marika Gunji et al. · Applied Physics Letters · 2012 · 28 citations

Engineering, Materials Engineering, Materials Science +17

Structural and Electrical Properties of HfO2/n-In_xGa_1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

Paul K. Hurley, Éamon O’Connor, Scott Monaghan et al. · ECS Transactions · 2009 · 21 citations

Engineering, Materials Engineering, Materials Science +17