Mo-Chiun Yu

A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides

Kuo-Nan Yang, Huan-Tsung Huang, Ming-Chin Chang et al. · IEEE Transactions on Electron Devices · 2000 · 45 citations

Electrical Engineering, Ultrathin Gate Oxides, Engineering +13

Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation

Chien-Hao Chen, Yean-Kuen Fang, S.F. Ting et al. · IEEE Transactions on Electron Devices · 2002 · 40 citations

Materials Science, Materials Engineering, Electrical Engineering +11

Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing

T. Ushiki, Mo-Chiun Yu, Y. Hirano et al. · IEEE Transactions on Electron Devices · 1997 · 29 citations

Materials Engineering, Reliable Tantalum, Electrical Engineering +11

Gate oxide reliability concerns in gate-metal sputtering deposition process: an effect of low-energy large-mass ion bombardment

T. Ushiki, Mo-Chiun Yu, K. Kawai et al. · Microelectronics Reliability · 1999 · 14 citations

Materials Engineering, Electrical Engineering, Ion Implantation +9

Improvement of gate oxide reliability for tantalum-gate MOS devices using xenon plasma sputtering technology

T. Ushiki, K. Kawai, Mo-Chiun Yu et al. · IEEE Transactions on Electron Devices · 1998 · 10 citations

Gate Oxide Reliability, Engineering, Ion Species +16