Chao Zhao

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Riikka L. Puurunen, Wilfried Vandervorst, W.F.A. Besling et al. · Journal of Applied Physics · 2004 · 156 citations

Natural Sciences, Materials Engineering, Materials Science +17

Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN_<i>x</i> Passivation and High-Temperature Gate Recess

Sen Huang, Qilong Bao, Xinhua Wang et al. · IEEE Transactions on Electron Devices · 2016 · 108 citations

Engineering, Electrical Engineering, Materials Science +17

Engineering the photoelectrochemical behaviors of ZnO for efficient solar water splitting

Mengmeng Ma, Yanbin Huang, Jun Liu et al. · Journal of Semiconductors · 2020 · 99 citations

Natural Sciences, Materials Engineering, Materials Science +17

Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

Xiaogen Yin, Yongkui Zhang, Huilong Zhu et al. · IEEE Electron Device Letters · 2019 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

Robust SiN&lt;sub&gt;&lt;italic&gt;x&lt;/italic&gt;&lt;/sub&gt;/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN&lt;sub&gt;&lt;italic&gt;x&lt;/italic&gt;&lt;/sub&gt; Layer

Xinhua Wang, Sen Huang, Yingkui Zheng et al. · IEEE Electron Device Letters · 2015 · 75 citations

Engineering, Electrical Engineering, Materials Science +16