Ming Zhu

Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide

Ming Zhu, Chih-Hang Tung, Yee‐Chia Yeo · Applied Physics Letters · 2006 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

<i>In Situ</i> Surface Passivation and CMOS-Compatible Palladium–Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

Hock-Chun Chin, Ming Zhu, Chih-Hang Tung et al. · IEEE Electron Device Letters · 2008 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

Strained n-Channel FinFETs Featuring <i>In Situ</i> Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

Tsung-Yang Liow, Kian-Ming Tan, Doran Weeks et al. · IEEE Transactions on Electron Devices · 2008 · 36 citations

Engineering, Electrical Engineering, Materials Science +12

A new structure of SOI MOSFET for reducing self-heating effect

Zheng Xuan Zhang, Qing Lin, Ming Zhu et al. · Ceramics International · 2004 · 24 citations

Engineering, Electrical Engineering, Materials Science +13

n-Channel GaAs MOSFET with TaN∕HfAlO Gate Stack Formed Using In Situ Vacuum Anneal and Silane Passivation

Hock-Chun Chin, Ming Zhu, Ganesh S. Samudra et al. · Journal of The Electrochemical Society · 2008 · 23 citations

Engineering, Electrical Engineering, Materials Science +17