Chih-Hang Tung - Concepedia

Concepedia

Author

Chih-Hang Tung

Institute of Microelectronics

Also Known As

Chih-Hang Tung, Chih-hang Tung, Chih‐hang Tung, Tung Chih-Hang

55

Publications

1.6K

Citations

21

H-Index

64

Concepts

All Affiliations

Institute of Microelectronics National University of Singapore Singapore Science Park Agency for Science, Technology and Research Institute of Materials Research and Engineering

CT

About

Chih-Hang Tung is an author at Institute of Microelectronics specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	32	1.6K
2	Applied Physics	19	27	710
3	Biomedical Engineering	2	2	644
4	Chemical Engineering	2	2	205
5	Biomolecular Engineering	1	1	27

Chih-Hang Tung

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33

Publications

1.6K

Citations

21

H-Index

	Year	Citations
Silicon Nanowire Arrays for Label-Free Detection of DNA Zhiqiang Gao, Ajay Agarwal, A. D. Trigg, Analytical Chemistry NanomedicineDna NanotechnologyEngineeringNanotechnologyBioelectronics	2007	427
Detection of MicroRNAs Using Target-Guided Formation of Conducting Polymer Nanowires in Nanogaps Yi Fan, Xiantong Chen, A. D. Trigg, Journal of the American Chemical Society NanoparticlesNanomedicineDna NanotechnologyNanoroboticsEngineering	2007	217
Electroless Plating of Metals onto Carbon Nanotubes Activated by a Single-Step Activation Method Li-Ming Ang, T. S. Andy Hor, Guoqin Xu, Chemistry of Materials EngineeringElectroless PlatingChemistryPalladium-decorated NanotubesChemical Engineering	1999	169
Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors Kah‐Wee Ang, King-Jien Chui, Vladimir Bliznetsov, Applied Physics Letters EngineeringMechanical EngineeringSilicon–carbon Source∕drain StressorsSige Source∕drain StressorsSemiconductor Device	2005	111
Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide Ming Zhu, Chih-Hang Tung, Yee‐Chia Yeo Applied Physics Letters Semiconductor TechnologyElectrical EngineeringPassivation TechniqueEngineeringSemiconductor Device	2006	51
<i>In Situ</i> Surface Passivation and CMOS-Compatible Palladium–Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs Hock-Chun Chin, Ming Zhu, Chih-Hang Tung, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2008	40
Strained n-Channel FinFETs Featuring <i>In Situ</i> Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content Tsung-Yang Liow, Kian-Ming Tan, Doran Weeks, IEEE Transactions on Electron Devices EngineeringChemical AnalysisSolid-state ChemistryHigh Carbon ContentChemistry	2008	36
Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure Kah‐Wee Ang, Chih-Hang Tung, N. Balasubramanian, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringNm Gate LengthEngineeringSi Channel Region	2007	31
Electromigration in copper damascene interconnects: reservoir effects and failure analysis Wei Shao, A. V. Vairagar, Chih-Hang Tung, Surface and Coatings Technology Materials ScienceElectrical EngineeringElectromigration TechniqueEngineeringInterconnect (Integrated Circuits)	2004	30
Strained ${\rm n}$-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance Kah‐Wee Ang, Jianqiang Lin, Chih-Hang Tung, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEnhanced Transistor PerformanceEngineeringDevice Design Parameters	2008	30

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