Hock-Chun Chin

Preparation and characterization of carbon-sulfur surface compounds

Hock-Chun Chin · Carbon · 1981 · 121 citations

Chemical Engineering, Porous Carbon, Carbon-sulfur Surface Compounds +3

III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin

Hock-Chun Chin, Xiao Gong, Lanxiang Wang et al. · IEEE Electron Device Letters · 2011 · 65 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +13

Silane and Ammonia Surface Passivation Technology for High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

Hock-Chun Chin, Xinke Liu, Xiao Gong et al. · IEEE Transactions on Electron Devices · 2010 · 57 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Lattice-Mismatched $\hbox{In}_{0.4}\hbox{Ga}_{0.6} \hbox{As}$ Source/Drain Stressors With <i>In Situ</i> Doping for Strained $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel n-MOSFETs

Hock-Chun Chin, Xiao Gong, Xinke Liu et al. · IEEE Electron Device Letters · 2009 · 53 citations

Materials Science, Wide-bandgap Semiconductor, Lateral Tensile Strain +9

<i>In Situ</i> Surface Passivation and CMOS-Compatible Palladium–Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

Hock-Chun Chin, Ming Zhu, Chih-Hang Tung et al. · IEEE Electron Device Letters · 2008 · 40 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11