Shichuang Sun

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si₃N₄as Gate Dielectric and Passivation Layer

Zhili Zhang, Guohao Yu, Xiaodong Zhang et al. · IEEE Transactions on Electron Devices · 2016 · 124 citations

Engineering, Electrical Engineering, Materials Science +17

Normally-off <i>p</i>-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Ronghui Hao, Kai Fu, Guohao Yu et al. · Applied Physics Letters · 2016 · 91 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

Zhili Zhang, Weiyi Li, Kai Fu et al. · IEEE Electron Device Letters · 2016 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; Gate Dielectric and Standard Fluorine Ion Implantation

Zhili Zhang, Kai Fu, Xuguang Deng et al. · IEEE Electron Device Letters · 2015 · 48 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Zhili Zhang, Shuang-Jiao Qin, Kai Fu et al. · Applied Physics Express · 2016 · 24 citations

Engineering, Electrical Engineering, Materials Science +17