Xuguang Deng - Concepedia

Author

Xuguang Deng

Suzhou Institute of Nano-tech and Nano-bionics ORCID

Also Known As

Deng Xu-Guang, Deng, Xuguang, Xuguang DENG, Xuguang Deng, Xuguang Deng (15996931)

Publications

898

Citations

H-Index

Concepts

All Affiliations

Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences Arizona State University Beijing University of Technology University of Chinese Academy of Sciences

About

Xuguang Deng is an author at Suzhou Institute of Nano-tech and Nano-bionics specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	789
2	Applied Physics	15	18	800
3	Electrical Engineering	12	13	654
4	Materials Engineering	4	4	82
5	Chemical Engineering	2	2	41

Xuguang Deng

Publications

824

Citations

H-Index

Page 1

	Year	Citations
Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs Ronghui Hao, Weiyi Li, Kai Fu, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2017	124
Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si<sub>3</sub>N<sub>4</sub>as Gate Dielectric and Passivation Layer Zhili Zhang, Guohao Yu, Xiaodong Zhang, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2016	123
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes Kai Fu, Houqiang Fu, Xuanqi Huang, IEEE Journal of the Electron Devices Society Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringApplied Physics	2020	75
High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings Houqiang Fu, Kai Fu, Shanthan Reddy Alugubelli, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh Voltage EngineeringApplied Physics	2019	70
AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator Zhili Zhang, Weiyi Li, Kai Fu, IEEE Electron Device Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2016	54
Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si<sub>3</sub>N<sub>4</sub> Gate Dielectric and Standard Fluorine Ion Implantation Zhili Zhang, Kai Fu, Xuguang Deng, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2015	45
Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition Fengfeng Shi, Jun Han, Yanhui Xing, Materials Letters Materials ScienceEngineeringSurface ScienceApplied PhysicsGallium Oxide	2018	41
Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress Houqiang Fu, Kai Fu, Chen Yang, Materials Today Materials ScienceMaterials ChallengesMaterials EngineeringWide-bandgap SemiconductorEngineering	2021	41
GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD Chen Yang, Houqiang Fu, Viswanathan Naveen Kumar, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesRegrown P-gan	2020	40
Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT Ronghui Hao, Ning Xu, Guohao Yu, IEEE Transactions on Electron Devices Electrical EngineeringTreatment TimeEngineeringPlasma ElectronicsRf Semiconductor	2018	32

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