Xuguang Deng

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Ronghui Hao, Weiyi Li, Kai Fu et al. · IEEE Electron Device Letters · 2017 · 124 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si₃N₄as Gate Dielectric and Passivation Layer

Zhili Zhang, Guohao Yu, Xiaodong Zhang et al. · IEEE Transactions on Electron Devices · 2016 · 123 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Kai Fu, Houqiang Fu, Xuanqi Huang et al. · IEEE Journal of the Electron Devices Society · 2020 · 75 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +9

High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings

Houqiang Fu, Kai Fu, Shanthan Reddy Alugubelli et al. · IEEE Electron Device Letters · 2019 · 70 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

Zhili Zhang, Weiyi Li, Kai Fu et al. · IEEE Electron Device Letters · 2016 · 54 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14