Houqiang Fu

MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

G. A. Seryogin, Fikadu Alema, Nicholas A. Valente et al. · Applied Physics Letters · 2020 · 140 citations

Engineering, Materials Engineering, Materials Science +17

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes

Yuji Zhao, Houqiang Fu, George T. Wang et al. · Advances in Optics and Photonics · 2018 · 137 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

Houqiang Fu, Izak Baranowski, Xuanqi Huang et al. · IEEE Electron Device Letters · 2017 · 110 citations

Engineering, Electrical Engineering, Materials Science +17

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers

Houqiang Fu, Xuanqi Huang, Hong Chen et al. · Applied Physics Letters · 2017 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I

Houqiang Fu, Kai Fu, Srabanti Chowdhury et al. · IEEE Transactions on Electron Devices · 2021 · 92 citations

Engineering, Electrical Engineering, Materials Engineering +17