Izak Baranowski

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

Houqiang Fu, Izak Baranowski, Xuanqi Huang et al. · IEEE Electron Device Letters · 2017 · 110 citations

Engineering, Electrical Engineering, Materials Science +17

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers

Houqiang Fu, Xuanqi Huang, Hong Chen et al. · Applied Physics Letters · 2017 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of GaN-on-GaN vertical <i>p</i>-<i>n</i> diode with regrown <i>p</i>-GaN by metalorganic chemical vapor deposition

Kai Fu, Houqiang Fu, Hanxiao Liu et al. · Applied Physics Letters · 2018 · 71 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications

Hong Chen, Houqiang Fu, Xuanqi Huang et al. · Optics Express · 2017 · 67 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

Houqiang Fu, Kai Fu, Xuanqi Huang et al. · IEEE Electron Device Letters · 2018 · 59 citations · Full text

Engineering, Electrical Engineering, Physics +17