Shanthan Reddy Alugubelli

Investigation of GaN-on-GaN vertical <i>p</i>-<i>n</i> diode with regrown <i>p</i>-GaN by metalorganic chemical vapor deposition

Kai Fu, Houqiang Fu, Hanxiao Liu et al. · Applied Physics Letters · 2018 · 71 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +12

High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings

Houqiang Fu, Kai Fu, Shanthan Reddy Alugubelli et al. · IEEE Electron Device Letters · 2019 · 70 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

Houqiang Fu, Kai Fu, Chen Yang et al. · Materials Today · 2021 · 41 citations · Full text

Materials Science, Materials Challenges, Materials Engineering +8

Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing

Houqiang Fu, Kai Fu, Hanxiao Liu et al. · Applied Physics Express · 2019 · 38 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +9

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Hanxiao Liu, Houqiang Fu, Kai Fu et al. · Applied Physics Letters · 2019 · 30 citations · Full text

Materials Science, Mesa Structures, Electrical Engineering +14