Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress - Concepedia

Concepedia

Publication | Open Access

Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

DOI Full Paper Access

41

Citations

133

References

2021

Year

Houqiang Fu, Kai Fu, Chen Yang, Hanxiao Liu, Kevin Hatch, Prudhvi Peri, Dinusha Herath Mudiyanselage, Bingjun Li, Tae-Hyeon Kim, Shanthan Reddy Alugubelli,

Materials Today

Materials ScienceMaterials ChallengesMaterials EngineeringWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium NitrideSelective Area RegrowthGan Power DeviceGallium OxideRecent Progress

References

	Year	Citations

Page 1

Page 1