Prudhvi Peri

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Kai Fu, Houqiang Fu, Xuanqi Huang et al. · IEEE Journal of the Electron Devices Society · 2020 · 81 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Enhancement-Mode Gate-Recess-Free GaN-Based <i>p</i>-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing

Chen Yang, Houqiang Fu, Prudhvi Peri et al. · IEEE Electron Device Letters · 2021 · 58 citations

Engineering, Electrical Engineering, Materials Science +13

Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

Houqiang Fu, Kai Fu, Chen Yang et al. · Materials Today · 2021 · 43 citations · Full text

Engineering, Materials Engineering, Materials Science +16

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Kai Fu, Houqiang Fu, Xuguang Deng et al. · Applied Physics Letters · 2021 · 31 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17