Statistics
Publications
13
Citations
528
H-Index
11
Active since
1996
Affiliations
Changhyun Kim is an author at Samsung (South Korea) specializing in engineering, microelectronics, and computer engineering.
Publications per year
1996–2019
13
13
55 nm capacitor-less 1T DRAM cell transistor with non-overlap structure
Ki‐Whan Song, Hoon Jeong, Jae‐Wook Lee et al. · 2008 · 80 citations
8Gb 3D DDR3 DRAM using through-silicon-via technology
Uksong Kang, Hoeju Chung, Seongmoo Heo et al. · 2009 · 73 citations
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