Uksong Kang

8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology

Uksong Kang, Hoeju Chung, Seongmoo Heo et al. · IEEE Journal of Solid-State Circuits · 2010 · 487 citations

Engineering, Computer Engineering, Electrical Engineering +15

8Gb 3D DDR3 DRAM using through-silicon-via technology

Uksong Kang, Hoeju Chung, Seongmoo Heo et al. · 2009 · 73 citations

Engineering, Computer Engineering, Electrical Engineering +17

18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution

Kyomin Sohn, Won-Joo Yun, Reum Oh et al. · 2016 · 33 citations

Engineering, Computer Engineering, High-performance Computing +16

An 8 Gb/s/pin 9.6 ns Row-Cycle 288 Mb Deca-Data Rate SDRAM With an I/O Error Detection Scheme

Kyu Hyun Kim, Hoeju Chung, Woo-Seop Kim et al. · IEEE Journal of Solid-State Circuits · 2007 · 15 citations

Engineering, Computer Engineering, Computer Science +17