Ki‐Whan Song - Concepedia

Author

Ki‐Whan Song

Samsung (South Korea)

Also Known As

Daehyun Kim, Ki-Whan Song, Kiwhan Song, Ki‐Whan Song, Song, Kiwhan

Publications

720

Citations

H-Index

Concepts

All Affiliations

Samsung (South Korea)Seoul National University

About

Ki‐Whan Song is an author at Samsung (South Korea) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	499
2	Electrical Engineering	11	11	499
3	Computer Engineering	9	9	406
4	Applied Physics	4	4	212
5	Computer Science	1	1	11

Ki‐Whan Song

Publications

562

Citations

H-Index

Page 1

	Year	Citations
A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput Seungjae Lee, Chulbum Kim, Minsu Kim, EngineeringEmerging Memory TechnologyComputer ArchitectureProgram ThroughputNand Flash Memory	2018	104
A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW Hoeju Chung, Byung‐Hoon Jeong, Byung-Jun Min, Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringMobile Systems	2011	83
55 nm capacitor-less 1T DRAM cell transistor with non-overlap structure Ki‐Whan Song, Hoon Jeong, Jae‐Wook Lee, Electrical EngineeringCell TransistorEngineeringNanoelectronicsElectronic Engineering	2008	80
13.4 A 512Gb 3-bit/Cell 3D 6<sup>th</sup>-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface Dongku Kang, Minsu Kim, Su Chang Jeon,	2019	52
A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology Daeyeal Lee, Ik‐Joon Chang, Sang-Yong Yoon, Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringFlash Memory	2012	48
A New Capacitorless 1T DRAM Cell: Surrounding Gate MOSFET With Vertical Channel (SGVC Cell) Hoon Jeong, Ki‐Whan Song, Il Han Park, IEEE Transactions on Nanotechnology Non-volatile MemoryElectrical EngineeringSgvc CellEngineeringMemory Effect	2007	47
Novel 4F<sup>2</sup> DRAM cell with Vertical Pillar Transistor(VPT) Hyun-Woo Chung, Huijung Kim, Hyun-Gi Kim, Future Dram DevicesElectrical EngineeringVpt DeviceEngineeringAdvanced Packaging (Semiconductors)	2011	42
A 31 ns Random Cycle VCAT-Based 4F$^{2}$ DRAM With Manufacturability and Enhanced Cell Efficiency Ki‐Whan Song, Jin‐Young Kim, Jae-Man Yoon, IEEE Journal of Solid-State Circuits Enhanced Cell EfficiencyElectrical EngineeringNon-volatile MemoryEngineeringVlsi Design	2010	33
13.1 A 1Tb 4b/cell NAND Flash Memory with t<sub>PROG</sub>=2ms, t<sub>R</sub>=110µs and 1.2Gb/s High-Speed IO Rate Doo-Hyun Kim, Hyung-Gon Kim, Yun Sung-Won, EngineeringStorage MarketEmerging Memory TechnologyComputer ArchitectureNand Flash Memory	2020	23
Design and optimization of two-bit double-gate nonvolatile memory cell for highly reliable operation Seongjae Cho, Il Han Park, Tae Hun Kim, IEEE Transactions on Nanotechnology Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringMosfet Structure	2006	15

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