Byung-Jun Min - Concepedia

Author

Byung-Jun Min

Samsung (South Korea)

Also Known As

B. G. Min, B. Min, B.-G. Min, Byung-Jun Min, ByungJun Min, Byungjun Min, Kun-Jin Chung

Publications

328

Citations

H-Index

Concepts

All Affiliations

Samsung (South Korea)Jusung Engineering (South Korea)Yonsei University

About

Byung-Jun Min is an author at Samsung (South Korea) specializing in engineering, microelectronics, and computer engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	218
2	Computer Engineering	5	5	168
3	Electrical Engineering	5	5	168
4	Applied Physics	2	2	50
5	Materials Engineering	1	1	34

Byung-Jun Min

Publications

270

Citations

H-Index

Page 1

	Year	Citations
A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW Hoeju Chung, Byung‐Hoon Jeong, Byung-Jun Min, Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringMobile Systems	2011	83
13.4 A 512Gb 3-bit/Cell 3D 6<sup>th</sup>-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface Dongku Kang, Minsu Kim, Su Chang Jeon,	2019	52
A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology Daeyeal Lee, Ik‐Joon Chang, Sang-Yong Yoon, Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringFlash Memory	2012	48
Formation of a Ge-rich layer during the oxidation of strained Si1−xGex Byung-Jun Min, Y. H. Pae, K. S. Jun, Journal of Applied Physics Materials EngineeringMaterials ScienceStrained Si1−xgexEngineeringOxidation Resistance	2006	34
Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film Byung-Jun Min, Jaehong Yoo, Hyunchul Sohn, Thin Solid Films Materials ScienceEngineeringSurface ScienceApplied PhysicsDry Oxidation	2009	16
A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme Mun-Kyu Choi, Byung-Gil Jeon, Nakwon Jang, IEEE Journal of Solid-State Circuits Non-volatile MemoryElectrical EngineeringEngineeringConventional Fram Device0.25-μM 3.0-V 1T1c	2002	16
High Performance Nanocrystal Based Embedded Flash Microcontrollers with Exceptional Endurance and Nanocrystal Scaling Capability Sung-Taeg Kang, B. Winstead, Jane Yater, Non-volatile MemoryEngineeringExceptional EnduranceComputer ArchitectureNanocomputing	2012	11
Development of Embedded Non-Volatile FRAMs for High Performance Smart Cards Kang-Woon Lee, Byung-Gil Jeon, Byung-Jun Min, JSTS Journal of Semiconductor Technology and Science Hardware SecurityLow-power ElectronicsElectrical EngineeringNonvolatile FramsEngineering	2004	10

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