Byung-Jun Min

A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW

Hoeju Chung, Byung‐Hoon Jeong, Byung-Jun Min et al. · 2011 · 83 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +13

13.4 A 512Gb 3-bit/Cell 3D 6^th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface

Dongku Kang, Minsu Kim, Su Chang Jeon et al. · 2019 · 52 citations

A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology

Daeyeal Lee, Ik‐Joon Chang, Sang-Yong Yoon et al. · 2012 · 48 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +11

Formation of a Ge-rich layer during the oxidation of strained Si1−xGex

Byung-Jun Min, Y. H. Pae, K. S. Jun et al. · Journal of Applied Physics · 2006 · 34 citations

Materials Engineering, Materials Science, Strained Si1−xgex +13

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

Byung-Jun Min, Jaehong Yoo, Hyunchul Sohn et al. · Thin Solid Films · 2009 · 16 citations

Materials Science, Engineering, Surface Science +8