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Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

Materials ScienceEngineeringSurface ScienceApplied PhysicsDry OxidationSi0.7ge0.3 FilmEpitaxial GrowthChemical Vapor DepositionThin Film ProcessingMicrostructureHigh Strain Rate