R. Mitsuhashi

Anomaly in Sputtering on Titanium Nitride Film Growth by Post-Irradiation Processing^*1

Kyung-youl Min, Yosuke Suzuki, R. Mitsuhashi et al. · Japanese Journal of Applied Physics · 1996 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +13

Effect of Hf Sources, Oxidizing Agents, and NH₃/Ar Plasma on the Properties of HfAlO_x Films Prepared by Atomic Layer Deposition

Takaaki Kawahara, Kazuyoshi Torii, R. Mitsuhashi et al. · Japanese Journal of Applied Physics · 2004 · 22 citations

Natural Sciences, Materials Engineering, Materials Science +12

Low V<inf>T</inf> CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal

S. Kubicek, T. Schram, Vasile Paraschiv et al. · 2007 · 18 citations

Engineering, Electrical Engineering, Materials Science +12

CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiON

A. Lauwers, A. Veloso, Thomas Hoffmann et al. · 2006 · 17 citations

Engineering, Computer Engineering, Electrical Engineering +17

Ni-based FUSI gates: CMOS Integration for 45nm node and beyond

Thomas Hoffmann, A. Veloso, A. Lauwers et al. · 2006 · 16 citations

Engineering, Computer Engineering, Electrical Engineering +12