Vasile Paraschiv

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen et al. · 2011 · 603 citations

Non-volatile Memory, Resistive Ram, Engineering +17

Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

B. Govoreanu, A. Redolfi, L. Zhang et al. · 2013 · 78 citations

Vertical Rram Requirements, Electrical Engineering, Non-volatile Memory +12

Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS

A. Veloso, Geert Hellings, M. J. Cho et al. · 2015 · 52 citations

Engineering, Integrated Circuits, Quantum Engineering +18

Kinetic Stabilities of Double, Tetra-, and Hexarosette Hydrogen-Bonded Assemblies

Leonard J. Prins, Edda E. Neuteboom, Vasile Paraschiv et al. · The Journal of Organic Chemistry · 2002 · 49 citations

Chemical Engineering, Engineering, Chiral Amplification +10

(Invited) Vertical Nanowire FET Integration and Device Aspects

A. Veloso, Efrain Altamirano Sánchez, S. Brus et al. · ECS Transactions · 2016 · 49 citations

Low-power Electronics, Electrical Engineering, Physical Design (Electronics) +13