Junshuai Chai

Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform

Hongye Yuan, Yuanquan Huang, Tiancheng Gong et al. · IEEE Electron Device Letters · 2024 · 67 citations

Engineering, Bioengineering, Experimental Performance +9

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf_<i>x</i>Zr_1-<i>x</i>O₂/Interlayer/Si (MFIS) Gate Structure

Fengbin Tian, Shujing Zhao, Hao Xu et al. · IEEE Transactions on Electron Devices · 2021 · 57 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO₂/Si (MFIS) Gate Structure

Shujing Zhao, Fengbin Tian, Hao Xu et al. · IEEE Transactions on Electron Devices · 2022 · 54 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation

Yuanquan Huang, Hongye Yuan, Bowen Nie et al. · Applied Physics Letters · 2024 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂

Tao Hu, Xiaoqing Sun, Mingkai Bai et al. · IEEE Electron Device Letters · 2024 · 37 citations

Engineering, Electrical Engineering, Materials Science +15