Concepedia

Fengbin Tian

FT

Statistics

Publications

8

Citations

210

H-Index

8

Active since

2021

Affiliations

Weifang University(Current)

Institute of Microelectronics

Chinese Academy of Sciences

University of Chinese Academy of Sciences

North China University of Technology

Fengbin Tian is an author at Weifang University specializing in materials science, semiconductor devices, and engineering.

ORCID

Publications per year

2021–2023

8

Publications

8

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf<sub> <i>x</i> </sub>Zr<sub>1-<i>x</i> </sub>O<sub>2</sub>/Interlayer/Si (MFIS) Gate Structure

Fengbin Tian, Shujing Zhao, Hao Xu et al. · IEEE Transactions on Electron Devices · 2021 · 57 citations · Full text

, , +17

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO<sub>2</sub>/Si (MFIS) Gate Structure

Shujing Zhao, Fengbin Tian, Hao Xu et al. · IEEE Transactions on Electron Devices · 2022 · 54 citations · Full text

, , +17

Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ V<sub>th</sub> Measurement

Xianzhou Shao, Junshuai Chai, Fengbin Tian et al. · IEEE Transactions on Electron Devices · 2023 · 28 citations

, , +17

Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si (MFIS) Gate Structure During Endurance Fatigue

Jiahui Duan, Shujing Zhao, Fengbin Tian et al. · IEEE Transactions on Electron Devices · 2022 · 21 citations

, , +17

Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO<sub> <i>x</i> </sub> at Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/SiO<sub> <i>x</i> </sub> Interface to Suppress Oxygen Vacancy Generation

Junshuai Chai, Hao Xu, Jinjuan Xiang et al. · IEEE Transactions on Electron Devices · 2022 · 15 citations

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