Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform

Abstract

Hafnium-based Ferroelectric Field-Effect Transistors (FeFETs) suffer from limited endurance. In-depth understanding of the trap behaviour during failure process is crucial for endurance improvement. In this work, aiming at the characteristics of FeFETs, Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique is optimized and an advanced trap characterization platform based on newly optimized TSCIS method combined with Low Frequency Noise (LFN) and C-V characteristics for resolving spatial and energetic distribution of traps in FeFETs is developed. Furthermore, through this advanced trap characterization platform, the trap behaviours of nitridation/non-nitridation FeFETs during endurance process are characterized and compared in detail. The improvement of interface quality by nitridation is finally confirmed from the defect level.