Alice Boussagol

Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices

T. Akatsu, C. Deguet, Loïc Sanchez et al. · Materials Science in Semiconductor Processing · 2006 · 128 citations

Electronic Devices, Engineering, Electronic Engineering +5

Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range

P. Nguyen, Ian Cayrefourcq, K.K. Bourdelle et al. · Journal of Applied Physics · 2005 · 29 citations

Materials Science, Ion Implantation, Engineering +14

The effect of order and dose of H and He sequential implantation on defect formation and evolution in silicon

P. Nguyen, K.K. Bourdelle, T. Maurice et al. · Journal of Applied Physics · 2007 · 17 citations

Engineering, Silicon On Insulator, Defect Tolerance +16

Fundamentals of Wafer Bonding for SOI: From Physical Mechanisms Towards Advanced Modeling

Ionut Radu, Alice Boussagol, Alexandre Barthelemy et al. · ECS Transactions · 2008 · 11 citations

Materials Engineering, Materials Science, Wafer Scale Processing +15