Wafer-scale integration of double gated WS₂-transistors in 300mm Si CMOS fab

Inge Asselberghs, Quentin Smets, T. Schram, +21

Electrical EngineeringWafer Scale ProcessingEngineeringThree-dimensional Heterogeneous IntegrationNanoelectronics +10

Optical Properties of Bismuth Telluride Thin Films, Bi2Te3/Si(100) and Bi2Te3/SiO2/Si(100)

El. H. Kaddouri, T. Maurice, X. Gratens, +5

physica status solidi (a)

Scaling of double-gated WS₂ FETs to sub-5nm physical gate length fabricated in a 300mm FAB

Quentin Smets, T. Schram, Devin Verreck, +19

2021 IEEE International Electron Devices Meeting (IEDM)

Semiconductor TechnologyElectrical EngineeringEngineeringPhysicsTechnology Scaling +9

The effect of order and dose of H and He sequential implantation on defect formation and evolution in silicon

P. Nguyen, K.K. Bourdelle, T. Maurice, +7

Journal of Applied Physics

EngineeringSilicon On InsulatorDefect ToleranceSequential ImplantationIon Implantation +14

Raman and photoluminescence spectroscopy from n- and p-type 6H-SIC alpha-particle irradiated

H.W. Kunert, T. Maurice, J. Barnaś, +3

Vacuum

P-type 6H-sic Alpha-particlePhotoluminescencePhysicsNatural SciencesSpectroscopy +3

Mid Infrared Optical Investigations of Pb1?xEuxSe ? BaF2 Thin Films Grown by MBE

T. Maurice, F. Mahoukou, G Breton, +4

physica status solidi (b)

MOVPE In1−xGaxAs high mobility channel for 3-D NAND memory

E. Capogreco, J. G. Lisoni, A. Arreghini, +9

Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringNanoelectronics +12

Scaled transistors with 2D materials from the 300mm fab

Inge Asselberghs, T. Schram, Quentin Smets, +15

Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringThree-dimensional Heterogeneous Integration +10

High yield and process uniformity for 300 mm integrated WS 2 FETs

T. Schram, Quentin Smets, D. Radisic, +9

Symposium on VLSI Technology