Optical Properties of Bismuth Telluride Thin Films, Bi2Te3/Si(100) and Bi2Te3/SiO2/Si(100)

Abstract

In this work, we have studied bismuth telluride (Bi2Te3) thin films on Si(100) and SiO2/Si(100) substrates grown by Hot Wall Epitaxy (HWE) technique. The morphology of the surface was controlled by Atomic Force Microscopy (AFM). Reflection and transmission experiments in the mid-infrared (MIR) spectral range were performed at room temperature. We have deduced the frequency dependence of the absorption coefficient. The refractive index was determined in the mid-infrared (MIR) spectral range for these samples and the energy band gap was evaluated.