T. Vandeweyer

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen et al. · 2011 · 603 citations

Non-volatile Memory, Resistive Ram, Engineering +17

Highly reliable TaO<inf>x</inf> ReRAM with centralized filament for 28-nm embedded application

Y. Hayakawa, A. Himeno, Ryo Yasuhara et al. · 2015 · 85 citations

High Thermal Stability, Cell Structure, Engineering +20

Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

M.J.H. van Dal, Nadine Collaert, G. Doornbos et al. · 2007 · 79 citations

Engineering, Integrated Circuits, Interconnect (Integrated Circuits) +18

A Low-Power Multi-Gate FET CMOS Technology with 13.9ps Inverter Delay, Large-Scale Integrated High Performance Digital Circuits and SRAM

K. von Arnim, E. Augendre, A.C. Pacha et al. · 2007 · 76 citations

Low-power Electronics, Electrical Engineering, Engineering +11

A new complementary hetero-junction vertical Tunnel-FET integration scheme

R. Rooyackers, A. Vandooren, Anne S. Verhulst et al. · 2013 · 60 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13