Udo Schwalke - Concepedia

Author

Udo Schwalke

Technical University of Darmstadt

Also Known As

Schwalke, Udo, U Schwalke, U. SCHWALKE, U. Schwalke, Udo SCHWALKE, Udo Schwalke

226

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Technical University of Darmstadt IMEC Fraunhofer Institute for Mechanics of Materials Infineon Technologies (Germany)IBM (United States)

About

Udo Schwalke is an author at Technical University of Darmstadt specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	34	1.3K
2	Applied Physics	15	27	1K
3	Chemistry	7	7	200
4	Chemical Engineering	3	3	72
5	Natural Sciences	1	1	52

Udo Schwalke

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics A. Kerber, E. Cartier, L. Pantisano, IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringPhysicsNanoelectronics	2003	357
Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics A. Kerber, E. Cartier, L. Pantisano, Gate DielectricsElectrical EngineeringSevere Charge TrappingEngineeringPhysics	2003	91
Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes A. Kerber, E. Cartier, R. Degraeve, IEEE Transactions on Electron Devices Materials EngineeringMaterials ScienceElectrical EngineeringDielectric ReliabilityEngineering	2003	67
Ultra-thick gate oxides: charge generation and its impact on reliability Udo Schwalke, M. Pölzl, Thomas Sekinger, Microelectronics Reliability Materials ScienceElectrical EngineeringEngineeringNanoelectronicsStress-induced Leakage Current	2001	67
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics A. Kerber, E. Cartier, L. Pantisano, TUbilio (Technical University of Darmstadt) Electrical EngineeringSevere Charge TrappingVt InstabilityEngineeringNanoelectronics	2003	64
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes A. Kerber, E. Cartier, R. Degraeve, Microelectronic Engineering	2003	54
Vibrational spectra of chemisorbed NO2 and condensed N2O4 on the Ru(001) surface Udo Schwalke, J. E. Parmeter, W. H. Weinberg The Journal of Chemical Physics Initial No2 AdsorptionEngineeringChemistrySpectra-structure CorrelationChemisorbed No2	1986	52
Interaction of formamide with the Ru(001) surface J. E. Parmeter, Udo Schwalke, W. H. Weinberg Journal of the American Chemical Society Materials ScienceInorganic ChemistryAltmetricsEngineeringSurface Chemistry	1988	48
Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID–VG A. Kerber, E. Cartier, L. Pantisano, Microelectronic Engineering Electrical EngineeringEngineeringStress-induced Leakage CurrentApplied PhysicsSio2/hfo2 Gate Dielectrics	2004	39
CMOS without doping: Multi-gate silicon-nanowire field-effect-transistors Frank Wessely, Tillmann Krauss, Udo Schwalke Solid-State Electronics Electrical EngineeringMulti-gate Silicon-nanowire Field-effect-transistorsEngineeringNanoelectronicsApplied Physics	2011	37

Page 1