Udo Schwalke

Origin of the threshold voltage instability in SiO₂/HfO₂ dual layer gate dielectrics

A. Kerber, E. Cartier, L. Pantisano et al. · IEEE Electron Device Letters · 2003 · 357 citations

Device Modeling, Electrical Engineering, Engineering +13

Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

A. Kerber, E. Cartier, L. Pantisano et al. · 2003 · 91 citations

Gate Dielectrics, Electrical Engineering, Severe Charge Trapping +14

Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes

A. Kerber, E. Cartier, R. Degraeve et al. · IEEE Transactions on Electron Devices · 2003 · 67 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Ultra-thick gate oxides: charge generation and its impact on reliability

Udo Schwalke, M. Pölzl, Thomas Sekinger et al. · Microelectronics Reliability · 2001 · 67 citations

Materials Science, Electrical Engineering, Engineering +8

Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics

A. Kerber, E. Cartier, L. Pantisano et al. · TUbilio (Technical University of Darmstadt) · 2003 · 64 citations

Electrical Engineering, Severe Charge Trapping, Vt Instability +11