J. Spear

Low-temperature growth of epitaxial ZnO films on (001) sapphire by ultraviolet- assisted pulsed laser deposition

V. Crăciun, J. Perrière, Nabil Bassim et al. · Applied Physics A · 1999 · 38 citations

Natural Sciences, Materials Engineering, Materials Science +14

Epitaxial ZnO Films Grown on Sapphire (001) by Ultraviolet-Assisted Pulsed Laser Deposition

V. Crăciun, R. K. Singh, J. Perrière et al. · Journal of The Electrochemical Society · 2000 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +12

Strained n-Channel FinFETs Featuring <i>In Situ</i> Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

Tsung-Yang Liow, Kian-Ming Tan, Doran Weeks et al. · IEEE Transactions on Electron Devices · 2008 · 36 citations

Engineering, Electrical Engineering, Materials Science +12

Band gap of Ge rich Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloys

B. A. Orner, J. O. Olowolafe, K. Roe et al. · Applied Physics Letters · 1996 · 28 citations

Natural Sciences, Materials Science, Physics +17

Silicon–Carbon Stressors With High Substitutional Carbon Concentration and <i>In Situ</i> Doping Formed in Source/Drain Extensions of n-Channel Transistors

Hoong-Shing Wong, Kah‐Wee Ang, Lap Chan et al. · IEEE Electron Device Letters · 2008 · 15 citations

Engineering, Electrical Engineering, Materials Science +17