K. Roe

Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy

J. Kolodzey, P. O’Neil, S. Zhang et al. · Applied Physics Letters · 1995 · 92 citations

Optical Materials, Engineering, Optical Absorption +17

Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors

K. Roe, G.L. Katulka, J. Kolodzey et al. · Applied Physics Letters · 2001 · 37 citations

Materials Science, Semiconductor Technology, Electrical Engineering +11

Band gap of Ge rich Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloys

B. A. Orner, J. O. Olowolafe, K. Roe et al. · Applied Physics Letters · 1996 · 28 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Optical properties of Ge1-yCy alloys

B. A. Orner, A.T. Khan, Dmitry Hits et al. · Journal of Electronic Materials · 1996 · 25 citations

Materials Science, Optical Materials, Engineering +3

The electrical characteristics of silicon carbide alloyed with germanium

G.L. Katulka, K. Roe, J. Kolodzey et al. · Applied Surface Science · 2001 · 17 citations

Materials Engineering, Electrical Engineering, Engineering +3