J. Kolodzey

Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon

J. Kolodzey, Enam Chowdhury, Thomas Adam et al. · IEEE Transactions on Electron Devices · 2000 · 198 citations

Aluminium Nitride, Engineering, Silicon On Insulator +19

Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films

Z E. Smith, V. Chu, Kimberly B. Shepard et al. · Applied Physics Letters · 1987 · 172 citations

Engineering, Interface State Absorption, Chemistry +19

Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

S.L. Rommel, Thomas E. Dillon, M. W. Dashiell et al. · Applied Physics Letters · 1998 · 108 citations · Full text

Engineering, Semiconductor Materials, Optoelectronic Devices +16

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy

Jay Prakash Gupta, Nupur Bhargava, Sang-Cheol Kim et al. · Applied Physics Letters · 2013 · 106 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy

Nupur Bhargava, Matthew Coppinger, Jay Prakash Gupta et al. · Applied Physics Letters · 2013 · 105 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +14