P. O’Neil

Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

K.W. Guarini, Anna W. Topol, M. Ieong et al. · 2003 · 134 citations

Engineering, Computer Engineering, Electrical Engineering +17

Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy

J. Kolodzey, P. O’Neil, S. Zhang et al. · Applied Physics Letters · 1995 · 92 citations

Engineering, Materials Engineering, Materials Science +17

High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

E. Leobandung, H. Nayakama, D. Mocuta et al. · 2005 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +17

Suitability of Scaled SOI CMOS for High-Frequency Analog Circuits

N. Zamdmer, Jean‐Olivier Plouchart, J. Kim et al. · 2002 · 37 citations

Engineering, Electrical Engineering, Analog Electronics +16

Low voltage GaAs power amplifiers for personal communications at 1.9 GHz

D. Ngo, B. Beckwith, P. O’Neil et al. · 2002 · 30 citations

Engineering, Electrical Engineering, Microelectronics +16