T. Efland

High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process

J. Mitros, Chin-Yu Tsai, H. Shichijo et al. · IEEE Transactions on Electron Devices · 2001 · 91 citations

Low-power Electronics, Electrical Engineering, High-voltage Drain +10

SCR-LDMOS. A novel LDMOS device with ESD robustness

S. Pendharkar, R. Teggatz, J. Devore et al. · 2002 · 50 citations

Low-power Electronics, Lateral Ldmosfet, Electrical Engineering +7

Lateral thinking about power devices (LDMOS)

T. Efland, Chin-Yu Tsai, S. Pendharkar · 2002 · 46 citations

Low-power Electronics, Electrical Engineering, Engineering +13

Avalanche-induced thermal instability in Ldmos transistors

P.L. Hower, Cheng Yu Tsai, S. Merchant et al. · 2002 · 34 citations

Device Modeling, Electrical Engineering, Engineering +10

16-60 V rated LDMOS show advanced performance in a 0.72 μm evolution BiCMOS power technology

Chin-Yu Tsai, T. Efland, S. Pendharkar et al. · 2002 · 28 citations

Low-power Electronics, Wide-bandgap Semiconductor, Electrical Engineering +15