T. Efland - Concepedia

Author

T. Efland

Texas Instruments (United States)

Also Known As

T. Efland, T.R Efland, T.R. Efland, Taylor Efland

Publications

549

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)Analog Devices (United States)

About

T. Efland is an author at Texas Instruments (United States) specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	455
2	Electrical Engineering	14	16	455
3	Computer Engineering	8	8	220
4	Applied Physics	3	3	83
5	Geography	1	1	16

T. Efland

Publications

480

Citations

H-Index

Page 1

	Year	Citations
High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process J. Mitros, Chin-Yu Tsai, H. Shichijo, IEEE Transactions on Electron Devices Low-power ElectronicsElectrical EngineeringHigh-voltage DrainEngineeringVlsi Design	2001	91
SCR-LDMOS. A novel LDMOS device with ESD robustness S. Pendharkar, R. Teggatz, J. Devore, Low-power ElectronicsLateral LdmosfetElectrical EngineeringEngineeringHigh Voltage Engineering	2002	50
Lateral thinking about power devices (LDMOS) T. Efland, Chin-Yu Tsai, S. Pendharkar Low-power ElectronicsElectrical EngineeringEngineeringPower IcPower Device	2002	46
Avalanche-induced thermal instability in Ldmos transistors P.L. Hower, Cheng Yu Tsai, S. Merchant, Device ModelingElectrical EngineeringEngineeringLdmos TransistorsThermal Instability Mechanism	2002	34
16-60 V rated LDMOS show advanced performance in a 0.72 μm evolution BiCMOS power technology Chin-Yu Tsai, T. Efland, S. Pendharkar, Low-power ElectronicsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2002	28
Optimized 60-V Lateral Dmos Devices for Vlsi Power Applications Oh‐Kyong Kwon, T. Efland, S.D.S. Malhi, Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignPower Ic	1991	27
Integration of power devices in advanced mixed signal analog BiCMOS technology T. Efland Microelectronics Journal	2001	25
Optimized complementary 40 V power LDMOS-FETs use existing fabrication steps in submicron CMOS technology T. Efland, Tobias Keller, Sean Keller, Low-power ElectronicsElectrical EngineeringFabrication StepsEngineeringVlsi Design	2002	25
Analysis of high current breakdown and UIS behavior of resurf LDMOS (RLDMOS) devices S. Pendharkar, T. Efland, Ching‐Yi Tsai Device ModelingElectrical EngineeringResurf LdmosEngineeringPower Device	2002	22
Current status and future trends in silicon power devices Philip L. Hower, S. Pendharkar, T. Efland Discrete Power DeviceEngineeringPower DevicesPower ElectronicsSilicon On Insulator	2010	22

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